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    Material information press release about share exchange between IET and EZconn Corporation.

    2025.12.04

    1.Date of occurrence of the event:2025/12/04
    2.Company name:EZconn Corporation.
    3.Relationship to the Company (please enter ”head office” or
    ”subsidiaries”):head office
    4.Reciprocal shareholding ratios:NA
    5.Cause of occurrence:
    EZconn convened the Audit Committee and the Board meeting today
    to approve a Share Exchange by Issuing New Shares Through a Capital
    Increase as Consideration for Acquiring the Newly Issued Shares of IET.
    6.Countermeasures:
    EZconn held a press conference to explain the material information
    regarding this matter at 8:00 PM on December 4, 2025, at TWSE.
    7.Any other matters that need to be specified (the information disclosure
    also meets the requirements of Article 7, subparagraph 9 of the Securities
    and Exchange Act Enforcement Rules, which brings forth a significant impact
    on shareholders rights or the price of the securities on public companies.):
    EZconn Corporation (TWSE: 6442, the ”Company” or ”EZconn”) and
    IntelliEPI Inc. (Cayman) (TPEx: 4971, a non-related party to the
    Company, ”IET”) today (December 4, 2025) each convened their respective
    Board meetings and approved a strategic share exchange to deepen
    long-term cooperation between the two companies. Under the approved
    structure, both EZconn and IET will subscribe to newly issued shares of
    the counterparty through capital increases. The agreed exchange ratio
    is 1 EZconn common shares for 5.1 IET common shares. Upon completion
    of the share exchange, EZconn will hold approximately 15.26% of IET's
    total common shares, and IET will hold approximately 1.79% of EZconn's
    total common shares.
    EZconn is a global manufacturer specializing in optical active and
    passive components and high-frequency RF connectors. Its products are
    widely deployed in data centers, 5G communications, low-earth-orbit (LEO)
    satellites, telecom base stations, aerospace and defense, and biomedical
    testing. In recent years, EZconn has actively expanded its technology
    layout and development efforts in silicon photonics and Co-Packaged Optics
    (CPO).
    IET focuses on the research, development, and production of III–V
    compound semiconductor epitaxial wafers, utilizing proprietary Molecular
    Beam Epitaxy (MBE) technology. Its product lineup—including InP, GaAs,
    and GaSb epitaxial wafers—is widely applied in high-speed optical
    communications, wireless communications, defense sensing, and quantum
    computing.
    This share-exchange alliance marks a significant milestone for EZconn,
    representing a strategic extension of its position in the optical
    communications value chain—from components and modules upstream into
    critical semiconductor materials. Through vertical integration, the two
    companies aim to accelerate deployment in next-generation, AI-driven
    data-center high-speed transmission markets.
    As AI servers and hyperscale data centers transition from 400G to 800G,
    1.6T, and even 3.2T, demand for high-speed optical transceivers and
    optical modules continues to grow rapidly.
    IET is one of only two global epitaxial wafer manufacturers capable of
    producing high-quality MBE wafers. Its InP-based HBT (heterojunction
    bipolar transistor), PIN photodiode, and APD (avalanche photodiode)
    epitaxy platforms are critical materials for high-speed optical
    communications.
    By forming a strategic alliance with IET, EZconn will gain access to
    upstream key epitaxial materials, strengthening supply-chain stability
    for high-performance optical components and ensuring secure access to
    the epitaxial wafers required for next-generation high-speed
    transmission. This will enhance EZconn's overall competitiveness and
    reinforce long-term industry barriers to entry.
    With the rapid emergence of silicon photonics (SiPh) and photonic
    integrated circuits (PICs), EZconn Group is actively developing
    external laser source modules for CPO architectures. CPO systems
    require high-quality compound semiconductors as light sources.
    IET provides industry-leading InP and VCSEL (vertical-cavity
    surface-emitting laser) epitaxial wafer technology. Its MBE process
    offers exceptional precision and controllability in epitaxial layer
    thickness and doping concentration—making it a preferred choice for
    high-performance CPO light sources.
    The complementary strengths of EZconn and IET enable the joint
    development of integrated CPO solutions, accelerating time-to-market
    and strengthening both companies' positions in next-generation CPO
    applications.
    EZconn has appointed Taishin Securities' Capital Markets Division as
    the exclusive financial advisor for this share exchange. Taishin
    Securities assisted with strategic planning, structural evaluation,
    and transaction execution. Following completion of the share
    exchange, EZconn and IET will establish a long-term, strategic
    partnership designed to leverage their respective competitive
    advantages, enhance operational performance, and create long-term
    shareholder value.

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